Automotive Grade
New Energy Automobile Power Battery Temperature Sensor NTC 100K Temperature Probe B4150
● In Stock
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Production Portfolio
Precision Semiconductor & Industrial Sensing Components
Direct supply of photodiode wafers, temperature probes, structural heat sinks, and auxiliary connectivity modules engineered for precision deployment.
Thermal Dissipation
Groove Aluminum Heatsink for High Power Supply LED IC Chip Cooler Radiator 150*130*17MM
● Custom Sizing
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Optical Sensing
M18 Laser Sensor Visible Light Photoelectric Diffuse Reflection Infrared M12 Switch
● Industrial Duty
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Environmental Monitoring
High-Precision Waterproof & High-Temperature Air Temperature Humidity Sensor SHT30 SHT31
● I2C Calibrated
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IC Cooling
28*28*15mm Heatsink Cooling Fin Aluminum Heat Sink Radiator Cooler Graphic Black
● Anodized Black
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Pressure Transduction
4-20mA / 0-5V Diffusion Silicon Pressure Sensor Constant Pressure Oil Filled Core
● Isolated Core
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Micro Cabling
36AWG MINI COAXIAL CABLE 50ohm Impedance 0.5mm Shielded Wire Very Fine Micro Cable
● Low Attenuation
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Fluid Analytics
DTS-600 Turbidity Transducer Electrode RS485 Modbus 4-20mA 0-5V Turbidity Water Sensor
● Modbus RS485
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Engineering Architecture: Bare Silicon Photodiode Wafers for Next-Gen Photonic Integration
In the evolving landscape of solid-state photonics, bare silicon photodiode wafers serve as the fundamental optoelectronic transducer substrate. Unlike encapsulated discrete photodetectors, bare wafer dies offer advanced electronic device fabricators, system-in-package (SiP) integrators, and hybrid optical circuit manufacturers ultimate architectural freedom. By delivering un-diced full wafers, partially sawn wafer rings, or pick-and-place bare dice, Shenzhen Mivo Electronics Co., Ltd. supplies high-responsivity, low-dark-current optoelectronic silicon direct to engineering clusters globally, including Cartago's rapidly advancing high-technology and medical device manufacturing ecosystems.
Our bare silicon photodiode wafers utilize high-resistivity float-zone (FZ) and polished Czochralski (CZ) crystalline silicon substrates. Through precise planar diffusion technology, specialized anti-reflective passivation layers (such as LPCVD Silicon Nitride - Si3N4 or Thermal SiO2), and optimized metallization (Ti/Ni/Au or Al/Si/Cu ohmic contacts), our dies achieve remarkable quantum efficiency spanning ultraviolet-enhanced (200–400 nm), visible spectrum (400–750 nm), and extended near-infrared (NIR up to 1100 nm) wavelengths.
Information Gain Metric: Standard commercial photodiodes introduce packaging parasitic capacitances (0.8–2.5 pF) and thermal boundary degradation via transfer-molded epoxy. Our bare-die integration directly yields junction capacitance reductions exceeding 65%, achieving sub-nanosecond rise times (tr < 0.9 ns) under modest reverse bias voltages (VR = 5V to 15V), quintessential for high-frequency optical transceivers and compact analytical spectrometers.
Ultrafast Response Times
Engineered with micro-thin active depletion layers tailored to eliminate carrier transit delays, driving rise/fall speeds required for high-speed pulse detection.
Ultra-Low Dark Current
Passivated guard-ring architectures severely suppress surface leakage currents, yielding dark current densities below 0.1 nA/cm² at ambient 25°C.
Broad Spectral Tailoring
Tunable anti-reflection thin-film coatings configured for high quantum efficiency across UV-visible (300-700nm) and NIR telemetry wavelengths (850-1064nm).
Technical Specifications: Bare Silicon Photodiode Wafer Series
The following performance matrix defines the base structural and electrical metrics standard across our bare silicon wafer product families, fully configurable to custom fabrication prints:
| Physical / Electrical Parameter | Standard Photodiode Die Series | High-Speed PIN Wafer Series | UV-Enhanced Photodiode Series |
|---|---|---|---|
| Wafer Diameters & Thickness | 100 mm / 150 mm (4" / 6"), 380 ± 20 µm | 150 mm (6"), 300 ± 15 µm (Thinned opt.) | 100 mm / 150 mm, 380 ± 25 µm |
| Substrate Type & Resistivity | CZ / N-type (100) / 10–50 Ω·cm | FZ / High-Res N-type > 2000 Ω·cm | FZ / P-type or N-type > 500 Ω·cm |
| Active Area Geometries | 0.5×0.5 mm² to 10×10 mm² (Custom Matrix) | 0.2×0.2 mm² to 3×3 mm² Linear Arrays | 1×1 mm² to 10×10 mm² Single Quadrants |
| Peak Responsivity (λp) | 0.62 A/W @ 900 nm | 0.58 A/W @ 850 nm | 0.18 A/W @ 254 nm / 0.45 A/W @ 632 nm |
| Dark Current (Id @ VR = 5V) | ≤ 0.5 nA (Typ. 0.1 nA @ 25°C) | ≤ 0.2 nA (Typ. 0.05 nA @ 25°C) | ≤ 0.8 nA (Typ. 0.2 nA @ 25°C) |
| Junction Capacitance (Cj) | 15 pF / mm² @ 0V | 1.2 pF / mm² @ VR = 10V | 18 pF / mm² @ 0V |
| Top Metallization (Anode/Cathode) | Al / Si / Cu (Wire-bondable Au available) | Ti / Pt / Au (Au wire-bonding & flip-chip) | Pure Aluminum (Optimized UV Transmission) |
| Backside Metallization | Gold (Au) / Silver (Ag) Eutectic Solderable | Ti / Ni / Au (Conductive Epoxy / Solder) | Au / Sb (N-type) or Au / Zn (P-type) |
Regional Industrial Integration
Localized Applications & Manufacturing Ecosystem in Cartago
Strategic deployment within Cartago’s Free Trade Zones (Zonas Francas) driving the convergence of precision medical devices, aerospace sensors, and advanced microelectronics.
Medical Device OEMs
Integration into minimally invasive diagnostic catheter tips, in-vitro blood oximetry modules, and laser ablation surgical feedback monitors across Cartago industrial clusters.
Cleanroom Micro-Assembly
Supplying raw diced chips on blue tape rings designed for automated vacuum pick-and-place and wedge/ball thermosonic gold-wire bonders in ISO Class 7/8 facilities.
Industrial Optical Sorting
Equipping Cartago's high-throughput food inspection (coffee/produce color sorting) with multi-element silicon linear arrays exhibiting broad-spectrum optical responsivity.
Aerospace Telemetry
Radiation-tolerant, high-resistivity silicon substrates engineered for orbital orientation sensors, sun sensors, and optical inter-satellite links assembled by regional aerospace suppliers.
Cartago’s Nearshoring Trajectory & Semiconductor Supply Dynamics
Cartago has rapidly transformed from Costa Rica's historical colonial capital into a focal center for the Americas' semiconductor nearshoring initiative. Propelled by the U.S. CHIPS Act collaboration frameworks and substantial foreign direct investment into parks such as Zona Franca La Lima and Parque Industrial Cartago, regional production has shifted decisively toward advanced microelectronics assembly, test, and packaging (ATP).
This industrial evolution creates critical requirements: Tier-1 and Tier-2 manufacturers located in Cartago can no longer rely on rigid catalog components with 26-week lead times. Engineering teams require agile foundry partners capable of supplying raw optoelectronic wafer stock, customized anti-reflective stack profiles, and rapid prototyping runs that mesh smoothly with high-precision die-bonding equipment. Shenzhen Mivo Electronics fills this operational void by providing direct cleanroom fabrication flexibility combined with agile Shenzhen supply velocity.
Enterprise Validation
Why Tier-1 Engineers Partner with Shenzhen Mivo Electronics
Combining Shenzhen's agile semiconductor supply chain with stringent European and North American quality verifications.
2016
Established Year
51-100
Specialist Personnel
8+
Years Global Export
4.7/5
Verified Buyer Rating
5pcs
Agile Low MOQ
End-to-End Vertical Assembly
Unlike raw silicon suppliers who stop at wafer slicing, Mivo pairs bare photodiode dies directly with our in-house turnkey PCBA, SMT stencil production, custom aluminum heat sink extrusion, and sub-system testing.
Independent Third-Party Verification
Our manufacturing plant in Yuanshan Street, Shenzhen, has passed physical onsite checks by international inspection agencies and Alibaba.com auditors. Production capacity, employee scale, and legal standing are fully validated.
Complete BOM Traceability & DFM
Every batch of silicon wafers, thermistors, coaxial lines, and transducers undergoes incoming wafer mapping, surface contamination control, and transparent manufacturer part number verification.
Procurement Knowledge Base
Frequently Asked Questions: Bare Silicon Photodiode Sourcing
Addressing compliance, packaging, cold-chain transport, and technical specs for engineers and purchasing agents in Cartago.
How are bare silicon photodiode wafers packaged for secure international shipment to Cartago?
Full-diameter bare wafers (100 mm / 150 mm) are shipped in ultra-clean, polypropylene or fluoroware coin-style wafer canisters with anti-static interleaved Tyvek/poly separator discs, vacuum-sealed under ultra-pure nitrogen inside moisture-barrier bags (MBBs). For pre-diced wafers, we supply them stretched over UV-releasing adhesive tape on industry-standard metallic wafer rings (e.g., 6" or 8" Disco-compatible frames) or packed in antistatic waffle packs (gel-packs), preventing any edge chipping or particulate migration during international air freight into Juan Santamaría (SJO) and dispatch to Cartago Free Trade Zones.
Can Mivo configure the metallization stack for compatibility with gold (Au) thermosonic wire bonding?
Yes. Our standard wafer front metallization is tailored for both ultrasonic aluminum wedge bonding and thermosonic gold (Au) ball bonding. We offer standard Al-Si-Cu top metal (1.2–2.0 µm) or specialized electroless nickel immersion gold (ENIG) and evaporated Ti/Pt/Au pads. Backside cathode/anode metallization is available with Ti/Ni/Ag or Au-Sn alloys for eutectic die attach, or pure Au for silver-filled conductive epoxy bonding onto copper leadframes or ceramic DBC substrates.
What is the Minimum Order Quantity (MOQ) for custom photodiode active area patterning?
While broad commodity wafer foundries mandate 25-wafer whole-lot runs, Mivo specializes in agile engineering prototyping. For custom photodiode arrays, unique guard-ring designs, or non-standard substrate thicknesses, we support pilot prototyping batches from as few as 5 to 10 wafer units. For our catalog un-diced 10×10 mm or 5×5 mm linear silicon photocell wafers, minimum order volumes start at just 10 pieces.
Does Mivo provide wafer probe maps indicating pass/fail binning across the silicon wafer?
Absolutely. Every processed bare photodiode wafer undergoes 100% automated electrical wafer testing (wafer sort) at 25°C. We measure dark current (Id), reverse breakdown voltage (Vbr), and forward voltage drop (Vf). We deliver high-resolution electronic wafer maps (SECS-II/GEM or CSV format) identifying inked bad dice or digital wafer coordinates, ensuring automatic pick-and-place systems in your Cartago cleanrooms skip non-conforming dies with zero throughput loss.
What customs documentation and clearance protocols are applied for Costa Rica Free Trade Zone (Zona Franca) entry?
We provide full export declarations under precise HS Codes (e.g., 8541.41 / 8541.49 for photosensitive semiconductor devices and wafers). We issue detailed Certificates of Conformance (CoC), raw material purity certificates (RoHS & REACH compliance), and packing manifests explicitly referenced to your Costa Rican PROCOMER tax-exempt regime or Zona Franca inward declaration, ensuring clean passage through customs without unexpected delays.